INTERFACE MODIFICATION OF REFRACTORY METAL-SILICON STRUCTURES BY ION IMPLANTATION.

K. L. Wang, F. Bacon, R. F. Reihl

研究成果: Conference article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The modifications of the transition metal-silicon interface by ion implantation were studied systematically. Interface mixing was observed to be a general result in samples implanted at temperatures of 78, 297, and 423 K. Elemental depth distributions obtained using Auger electron spectroscopy combined with ion sputtering illustrated composition plateaus near the interface of the ion-implanted structures. Additionally, high energy resolution Auger analyses of the silicon LVV transition for the implanted samples showed an energy shift and a change of the spectrum relative to the elemental silicon. The Auger-analysis results indicate that compound (silicide) formation can be induced by ion-implantation into transition metal-Si structures, even in cases where high temperatures are normally required for thermal reaction. The implications for applications to very large-scale integration of electronic devices are discussed.

原文English
頁(從 - 到)1909-1912
頁數4
期刊Journal of Vacuum Science and Technology
16
發行號6
DOIs
出版狀態Published - 1979
事件Proc of the Symp on Electron, Ion and Photon Beam Technol, 15th - Boston, Mass
持續時間: 1979 五月 291979 六月 1

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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