The modifications of the transition metal-silicon interface by ion implantation were studied systematically. Interface mixing was observed to be a general result in samples implanted at temperatures of 78, 297, and 423 K. Elemental depth distributions obtained using Auger electron spectroscopy combined with ion sputtering illustrated composition plateaus near the interface of the ion-implanted structures. Additionally, high energy resolution Auger analyses of the silicon LVV transition for the implanted samples showed an energy shift and a change of the spectrum relative to the elemental silicon. The Auger-analysis results indicate that compound (silicide) formation can be induced by ion-implantation into transition metal-Si structures, even in cases where high temperatures are normally required for thermal reaction. The implications for applications to very large-scale integration of electronic devices are discussed.
|頁（從 - 到）||1909-1912|
|期刊||Journal of Vacuum Science and Technology|
|出版狀態||Published - 1979|
|事件||Proc of the Symp on Electron, Ion and Photon Beam Technol, 15th - Boston, Mass|
持續時間: 1979 五月 29 → 1979 六月 1
All Science Journal Classification (ASJC) codes
- 工程 (全部)