Interface States of Modulation-Doped AlGaAs/GaAs Heterostructures

Sang Koo Chung, Y. Wu, K. L. Wang

研究成果: Article同行評審

16 引文 斯高帕斯(Scopus)

摘要

We have used the admittance spectroscopy to investigate interface states associated with heterojunction of modulation-doped AlGaAs/GaAs FET's. Anomalous frequency dispersion of the capacitance was observed. The results of the measurements were interpreted in terms of an equivalent circuit containing a series resistance of the two-dimensional electron gas in the ungated region between the gate and the source and drain electrodes. The maximum density of the interface states was found to be 1.3 x 1012 cm-2.eV-1 around 0.13 eV below the Ec edge of GaAs.

原文English
頁(從 - 到)149-153
頁數5
期刊IEEE Transactions on Electron Devices
34
發行號2
DOIs
出版狀態Published - 1987 二月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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