Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

J. S. Chen; J. S. Jeng; C. C. Chang

Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

J. S. Chen, J. S. Jeng, C. C. Chang

研究成果: Paper › 同行評審

摘要

Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

原文	English
頁面	266-267
頁數	2
出版狀態	Published - 2001
事件	Proceedings of the Fourth International Conference on Materials Engineering for Resources - Akita, Japan 持續時間: 2001 10月 11 → 2001 10月 13

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Other	Proceedings of the Fourth International Conference on Materials Engineering for Resources
國家/地區	Japan
城市	Akita
期間	01-10-11 → 01-10-13

All Science Journal Classification (ASJC) codes

一般工程

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title = "Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures",

abstract = "Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.",

author = "Chen, {J. S.} and Jeng, {J. S.} and Chang, {C. C.}",

year = "2001",

language = "English",

pages = "266--267",

note = "Proceedings of the Fourth International Conference on Materials Engineering for Resources ; Conference date: 11-10-2001 Through 13-10-2001",

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TY - CONF

T1 - Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

AU - Chen, J. S.

AU - Jeng, J. S.

AU - Chang, C. C.

PY - 2001

Y1 - 2001

N2 - Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

AB - Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

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M3 - Paper

AN - SCOPUS:0035790020

SP - 266

EP - 267

T2 - Proceedings of the Fourth International Conference on Materials Engineering for Resources

Y2 - 11 October 2001 through 13 October 2001

ER -

Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

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