Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.
|Published - 2001 12月 1
|Proceedings of the Fourth International Conference on Materials Engineering for Resources - Akita, Japan
持續時間: 2001 10月 11 → 2001 10月 13
|Proceedings of the Fourth International Conference on Materials Engineering for Resources
|01-10-11 → 01-10-13
All Science Journal Classification (ASJC) codes