Interfacial characteristics of copper/diffusion barrier/low dielectric constant material systems at elevated temperatures

Jen-Sue Chen, J. S. Jeng, C. C. Chang

研究成果: Paper同行評審

1 引文 斯高帕斯(Scopus)

摘要

Thermal reactions of sputtered Cu films on the fluorinated silicate glass (FSG) and organosilicate glass (OSG) layers, with and without TiN or TaN diffusion barrier, were investigated. The sheet resistance, surface morphology, phase formation and compositional depth profile of the mutilayer structures after vacuum annealing at 400-800 °C were examined. It is found that the sheet resistance values of all samples decrease after annealing at 400-600 °C and increase after annealing at 700 or 800 °C. Without the barrier layer, the increase of sheet resistance is accompanied with the dewetting of Cu films. When a TiN/Ti or a TaN/Ta barrier layer is interposed between copper and the dielectric layer, the degree of Cu dewetting is significantly reduced for both systems.

原文English
頁面266-267
頁數2
出版狀態Published - 2001 12月 1
事件Proceedings of the Fourth International Conference on Materials Engineering for Resources - Akita, Japan
持續時間: 2001 10月 112001 10月 13

Other

OtherProceedings of the Fourth International Conference on Materials Engineering for Resources
國家/地區Japan
城市Akita
期間01-10-1101-10-13

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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