Interfacial reaction between Sn-Ag-Cu, Sn-Ag-Cu-Ni-Ge lead-free solders and metallic substrates

Chiang Ming Chuang, Po Cheng Shi, Kwang-Lung Lin

研究成果: Conference contribution

16 引文 斯高帕斯(Scopus)

摘要

Several Sn-Ag-Cu lead-free solders and two kinds of metallic substrates, Cu and Cu/Ni/Au, were selected to explore the effect of microelements (Ni and Ge) on the interfacial reaction between solder and substrates. When solders reacted with Cu substrate, the thickness of the interfacial intermetallics of the Sn-3.5Ag-0.5Cu-0.07Ni-0.01Ge (in wt%) solder is several times as that of the Sn-3.5Ag-0.7Cu solder. Besides, the addition of microelements would transfer the feature of interfacial intermetallics from pebble shape to worm shape. However, the negligible difference in XRD data of these two alloys suggests that both interfacial intermetallics have the same crystal structure. The major interfacial intermetallic formed with Sn-3.5Ag-0.7Cu solder is Cu6Sn5, while it is (Cux, Ni1-x)6Sn5 with the solder containing Ni and Ge. The results of Electron Probe Microanalyzer (EPMA) investigation show that the aggregation of Ni in the interfacial intermetallics affects the interfacial reaction rate and the morphology of interfacial intermetallics. On the other hand, the features of the interfacial layer formed with a Cu/Ni/Au substrate are similar for the Sn-3.2Ag-0.5Cu and Sn-3.5Ag-0.5Cu-0.07Ni-0.01Ge solders. However, Ni and Ge enhance the shear strength of BGA solder ball attachment. The results of the cross section investigation indicate that the interfacial intermetallics were composed of coarse (Cuy, Ni1-y)6Sn5 and fine uniformly dispersed Ni3Sn4.

原文English
主出版物標題Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002
發行者Institute of Electrical and Electronics Engineers Inc.
頁面360-365
頁數6
ISBN(電子)078037682X, 9780780376823
DOIs
出版狀態Published - 2002 一月 1
事件4th International Symposium on Electronic Materials and Packaging, EMAP 2002 - Kaohsiung, Taiwan
持續時間: 2002 十二月 42002 十二月 6

出版系列

名字Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002

Other

Other4th International Symposium on Electronic Materials and Packaging, EMAP 2002
國家Taiwan
城市Kaohsiung
期間02-12-0402-12-06

    指紋

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Science(all)

引用此

Chuang, C. M., Shi, P. C., & Lin, K-L. (2002). Interfacial reaction between Sn-Ag-Cu, Sn-Ag-Cu-Ni-Ge lead-free solders and metallic substrates. 於 Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002 (頁 360-365). [1188865] (Proceedings of the 4th International Symposium on Electronic Materials and Packaging, EMAP 2002). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EMAP.2002.1188865