@article{f2a34644d5014ad2b775937e2dc336ee,
title = "Interfacial reactions of Pt-based Schottky contacts on InGaP",
abstract = "We have investigated the interfacial reaction between platinum and InGaP in a Schottky diode structure. There was a 7.5-nm -thick amorphous layer formed at the interface between Pt and InGaP after metal deposition. After annealing at 325 °C for 1 min, this amorphous layer increased to 12.8 nm and the reverse leakage current also decreased. The diffusion of Pt atoms and the crystallization of amorphous layer took place after annealing at 325 °C for 10 min. Prolonging the annealing to 3 h led to formation of Ga2 Pt and Ga Pt3 phases in InGaP and Schottky diodes degraded after these new phases were observed.",
author = "Chu, {L. H.} and Chang, {E. Y.} and Wu, {Y. H.} and Huang, {J. C.} and Chen, {Q. Y.} and Chu, {W. K.} and Seo, {H. W.} and Lee, {C. T.}",
note = "Funding Information: The authors would like to acknowledge the support from the National Science Council, and the Ministry of Economic Affairs, Taiwan, R.O.C., under the Contracts Nos. NSC 95-2752-E-009-001-PAE and 95-EC-17-A-05-S1-020. The work at Houston was supported in part by the U.S. National Science Foundation through Grant No. DMR-0404542, the U.S. Department of Energy through Grant No. DE-FG02-05ER46208, the U.S. Air Force Office of Scientific Research through Grant No. FA9550-06-1-0401, and the State of Texas Strategic Partnership for Research in Nanotechnology (SPRING) through the Texas Center for Superconductivity at the University of Houston.",
year = "2008",
doi = "10.1063/1.2834849",
language = "English",
volume = "92",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "8",
}