Interfacial reactions of W thin film on single-crystal (001) β-SiC

L. Baud, C. Jaussaud, R. Madar, C. Bernard, J. S. Chen, M. A. Nicolet

研究成果: Article同行評審

41 引文 斯高帕斯(Scopus)


Interfacial reactions between a W thin film and a single-crystal (001) β-SiC substrate on rapid thermal annealing from 600 °C to 1100 °C for 60 s were investigated by backscattering spectrometry, X-ray diffraction, secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Backscattering spectrometry shows that W reacts with SiC at 950 °C. The product phases identified by X-ray diffraction are W5Si3 and W2C. At 1100 °C no more unreacted W is detected. Current-voltage measurements show that ohmic contacts are already obtained on as-deposited W. Contact resistivity measured using the circular transmission line model is about 10-3 Ω cm2. Thermodynamic studies of the solid phase stability in the ternary WSiC system help us to understand the chemical stability of W thin film.

頁(從 - 到)126-130
期刊Materials Science and Engineering B
出版狀態Published - 1995 一月

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)
  • 凝聚態物理學
  • 材料力學
  • 機械工業


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