Interfacial state density and terahertz radiation on oxide-GaAs interface

Chung Chih Chang, Ming Seng Hsu, Wei Juann Chen, Yau Chyr Wang, Wei Yang Chou, Jen Wei Huang

研究成果: Conference contribution

摘要

The amplitude of terahertz radiation (THz) from a series of oxide films on GaAs was measured by time resolved THz emission system. The barrier heights and the densities of the interfacial states are determined from the PR intensity as a function of the pump power density. The oxide-GaAs structures fabricated by in situ molecular beam epitaxy exhibit low interfacial state densities in the range of 1011 cm-2. It is found that the amplitude of THz radiation from Al2O3-, Ga2O 3-, and Ga2O3(Gd2O 3)-GaAs structures are increases with interfacial electric field. The reason is that the electric field is lower than the "critical electric field", the amplitude is proportional to the product of the electric field and the number of photo-excited carriers. However, as the field higher than the critical electric field, sample of air-GaAs structure, the lower THz amplitude was obtained due to the maximum drift velocity declines slightly as the field increases.

原文English
主出版物標題Photonic Fiber and Crystal Devices
主出版物子標題Advances in Materials and Innovations in Device Applications V
DOIs
出版狀態Published - 2011 十月 11
事件Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V - San Diego, CA, United States
持續時間: 2011 八月 212011 八月 22

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
8120
ISSN(列印)0277-786X

Other

OtherPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications V
國家/地區United States
城市San Diego, CA
期間11-08-2111-08-22

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電腦科學應用
  • 應用數學
  • 電氣與電子工程

指紋

深入研究「Interfacial state density and terahertz radiation on oxide-GaAs interface」主題。共同形成了獨特的指紋。

引用此