Interfacial traps and band offset enabled charge separation facilitating current/capacitance hysteresis in dual-oxide layered structure

Cheng Han Lyu, Rajneesh Chaurasiya, Bo Ru Lai, Kuan Ting Chen, Jen Sue Chen

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

Gradual switching in the memristor or memcapacitor devices is the key parameter for the next generation of bio-inspired neuromorphic computing. Here, we have fabricated the WOx/ZrOx dual-oxide layered device, which shows the coexistence of gradual resistive and capacitive switching arisen from the current and capacitance hysteresis curves, respectively. The expansion of hysteresis loop can be modulated by altering the oxygen content in the oxide materials. Interestingly, the presence of negative differential resistance (NDR) is dependent on the voltage sweep direction and range of applied bias, which can be reasoned by the local electric field, charge trapping/detrapping, and conduction band offset at the dual-oxide interface. This study provides the concept of the coexistence of current and capacitance hysteresis along with NDR, and it is highly potential for memristor and memcapacitor circuits to explore neuromorphic computing.

原文English
文章編號183505
期刊Applied Physics Letters
121
發行號18
DOIs
出版狀態Published - 2022 10月 31

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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