Intermetallic compound growth mechanism and failure modes of flip chip solder bump with different UBM structure during electromigration

Yong Sheng Zou, Yu Hsiang Hsiao, Kwang-Lung Lin

研究成果: Conference contribution

1 引文 (Scopus)

摘要

The growth mechanisms of intermetallic compound (IMC) and the failure modes in flip chip solder joint induced by electric current stressing have been investigated for various UBM and substrate metallizations. The UBM investigated was TiCuCuNi/TiCuNi while the substrate metallizations include electroless Ni(P)/electroless Pd/immersion Au (ENEPIG) and organic solderability preservatives (OSP) Cu substrate. The investigation was conducted with 7kA/cm at 160 °C. The main IMCs formed in the TiCuNi-ENEPIG bump were the Ni3Sn4, PdSn4 and AuSn4 phases. The nucleation of (Pd, Ni)Sn4 on Ni3Sn4 layer and the dissolution of Au and Pd into the melting solder form the rod shape AuSn4 and PdSn4 IMCs. The ENEPIG layer acts as barrier layer that inhibits the Cu pad consumption and forms Ni3P layer under electric current stressing. Cu atoms from the Cu pad diffused through the Ni3P layer to form the Cu6Sn5 IMC at the interface instead of the Ni3Sn4 IMC. The main IMCs formed in the bumps with TiCuNi-Cu and the TiCuCuNi-Cu as UBM were the Cu6Sn5 IMC as expected. The failure after the electromigration test occurs either through the expedite consumption of the bottom Cu pad, where no Ni barrier layer, or through the formation of voids and cracks at the IMC/solder interface on the Ni UBM side. The mechanism of void and crack formation was discussed in detail in this study.

原文English
主出版物標題Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014
發行者Institute of Electrical and Electronics Engineers Inc.
頁面155-158
頁數4
ISBN(電子)9781479969944
DOIs
出版狀態Published - 2014 一月 30
事件2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014 - Singapore, Singapore
持續時間: 2014 十二月 32014 十二月 5

出版系列

名字Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014

Other

Other2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014
國家Singapore
城市Singapore
期間14-12-0314-12-05

指紋

Electromigration
Soldering alloys
Failure modes
Intermetallics
Electric currents
Metallizing
Substrates
Crack initiation
Dissolution
Melting
Nucleation
Cracks
Atoms

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

引用此文

Zou, Y. S., Hsiao, Y. H., & Lin, K-L. (2014). Intermetallic compound growth mechanism and failure modes of flip chip solder bump with different UBM structure during electromigration. 於 Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014 (頁 155-158). [7028311] (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPTC.2014.7028311
Zou, Yong Sheng ; Hsiao, Yu Hsiang ; Lin, Kwang-Lung. / Intermetallic compound growth mechanism and failure modes of flip chip solder bump with different UBM structure during electromigration. Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 頁 155-158 (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014).
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Zou, YS, Hsiao, YH & Lin, K-L 2014, Intermetallic compound growth mechanism and failure modes of flip chip solder bump with different UBM structure during electromigration. 於 Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014., 7028311, Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014, Institute of Electrical and Electronics Engineers Inc., 頁 155-158, 2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014, Singapore, Singapore, 14-12-03. https://doi.org/10.1109/EPTC.2014.7028311

Intermetallic compound growth mechanism and failure modes of flip chip solder bump with different UBM structure during electromigration. / Zou, Yong Sheng; Hsiao, Yu Hsiang; Lin, Kwang-Lung.

Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 155-158 7028311 (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014).

研究成果: Conference contribution

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N2 - The growth mechanisms of intermetallic compound (IMC) and the failure modes in flip chip solder joint induced by electric current stressing have been investigated for various UBM and substrate metallizations. The UBM investigated was TiCuCuNi/TiCuNi while the substrate metallizations include electroless Ni(P)/electroless Pd/immersion Au (ENEPIG) and organic solderability preservatives (OSP) Cu substrate. The investigation was conducted with 7kA/cm at 160 °C. The main IMCs formed in the TiCuNi-ENEPIG bump were the Ni3Sn4, PdSn4 and AuSn4 phases. The nucleation of (Pd, Ni)Sn4 on Ni3Sn4 layer and the dissolution of Au and Pd into the melting solder form the rod shape AuSn4 and PdSn4 IMCs. The ENEPIG layer acts as barrier layer that inhibits the Cu pad consumption and forms Ni3P layer under electric current stressing. Cu atoms from the Cu pad diffused through the Ni3P layer to form the Cu6Sn5 IMC at the interface instead of the Ni3Sn4 IMC. The main IMCs formed in the bumps with TiCuNi-Cu and the TiCuCuNi-Cu as UBM were the Cu6Sn5 IMC as expected. The failure after the electromigration test occurs either through the expedite consumption of the bottom Cu pad, where no Ni barrier layer, or through the formation of voids and cracks at the IMC/solder interface on the Ni UBM side. The mechanism of void and crack formation was discussed in detail in this study.

AB - The growth mechanisms of intermetallic compound (IMC) and the failure modes in flip chip solder joint induced by electric current stressing have been investigated for various UBM and substrate metallizations. The UBM investigated was TiCuCuNi/TiCuNi while the substrate metallizations include electroless Ni(P)/electroless Pd/immersion Au (ENEPIG) and organic solderability preservatives (OSP) Cu substrate. The investigation was conducted with 7kA/cm at 160 °C. The main IMCs formed in the TiCuNi-ENEPIG bump were the Ni3Sn4, PdSn4 and AuSn4 phases. The nucleation of (Pd, Ni)Sn4 on Ni3Sn4 layer and the dissolution of Au and Pd into the melting solder form the rod shape AuSn4 and PdSn4 IMCs. The ENEPIG layer acts as barrier layer that inhibits the Cu pad consumption and forms Ni3P layer under electric current stressing. Cu atoms from the Cu pad diffused through the Ni3P layer to form the Cu6Sn5 IMC at the interface instead of the Ni3Sn4 IMC. The main IMCs formed in the bumps with TiCuNi-Cu and the TiCuCuNi-Cu as UBM were the Cu6Sn5 IMC as expected. The failure after the electromigration test occurs either through the expedite consumption of the bottom Cu pad, where no Ni barrier layer, or through the formation of voids and cracks at the IMC/solder interface on the Ni UBM side. The mechanism of void and crack formation was discussed in detail in this study.

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Zou YS, Hsiao YH, Lin K-L. Intermetallic compound growth mechanism and failure modes of flip chip solder bump with different UBM structure during electromigration. 於 Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 155-158. 7028311. (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014). https://doi.org/10.1109/EPTC.2014.7028311