Intra-level voltage ramping-up to dielectric breakdown failure on Cu/porous low-k interconnections in 45 nm ULSI generation

C. H. Huang, N. F. Wang, Y. Z. Tsai, C. I. Hung, M. P. Houng

研究成果: Article

10 引文 斯高帕斯(Scopus)

摘要

The degradation of reliability for intra-level voltage-breakdown in the 45 nm generation node has become an increasingly important issue with the introduction of porous low-k dielectrics. The dominant failure mechanism for lower voltage ramping-up to dielectric breakdown and higher leakage current was that more electrons easily transported through the percolation path in intra-level porous low-k interconnections damaged from HF corrosion. An optimal ultraviolet curing process and a less NH3 plasma pre-treatment on porous low-k dielectrics before the SiCN capping layer are developed to improve performance in both of these cases. The stiff configuration of the reconstruction of Si-O network structures and less HF corrosion is expected to have high tolerance to electrical failure. As a result, the proposed model of this failure facilitates the understanding of the reliability issue for Cu/porous low-k interconnections in back-end of line (BEOL) beyond 45 nm nodes.

原文English
頁(從 - 到)1735-1740
頁數6
期刊Microelectronic Engineering
87
發行號9
DOIs
出版狀態Published - 2010 十一月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

指紋 深入研究「Intra-level voltage ramping-up to dielectric breakdown failure on Cu/porous low-k interconnections in 45 nm ULSI generation」主題。共同形成了獨特的指紋。

  • 引用此