Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Jung Chuan Lee, Leng Wei Huang, Dung Shing Hung, Tung Han Chiang, Jung-Chun Huang, Jun Zhi Liang, Shang Fan Lee

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

原文English
文章編號052401
期刊Applied Physics Letters
104
發行號5
DOIs
出版狀態Published - 2014 一月 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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