Inverted-type inalas/inas high-electron-mobility transistor with liquid phase oxidized inalas as gate insulator

Yuan Ming Chen, Hsien Cheng Lin, Kuan Wei Lee, Yeong Her Wang

研究成果: Article同行評審

摘要

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverted-type InAlAs/InAs MOS-HEMT exhibits an improved maximum drain current density, higher transconductance, lower leakage current density, suppressed noise figures, and enhanced associated gain compared to the conventional Schottky-gate HEMT. Employing LPO to generate MOS structure improves the surface states and enhances the energy barrier. These results reveal that the proposed inverted-type InAlAs/InAs MOS-HEMT can provide an alternative option for device applications.

原文English
文章編號970
頁(從 - 到)1-10
頁數10
期刊Materials
14
發行號4
DOIs
出版狀態Published - 2021 二月 2

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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