Investigation and fabrication of AlGaN/GaN MOS-HEMTs with gate insulators grown by photoelectrochemical oxidation method

Ching Ting Lee, Li Hsien Huang

研究成果: Conference contribution

摘要

AlGaN/GaN MOS-HEMTs with gate insulators directly grown using photoelectrochemical (FEC) oxidation method were investigated. The gate length and the gate width is 1 μm and 50 μm, respectively. The drain-source saturation current (VGS=0 V) and the threshold voltage of AlGaN/GaN MOS-HEMTs is 580 mA/mm and -9 V, respectively. The maximum extrinsic transconductance is 76.72 mS/mm operated at VGS=- 5.1 V and V DS=10 V. The forward breakdown voltage and reverse breakdown voltage is 25 V and larger than -100 V, respectively. When the VGS=- 60 V and 20 V, the leakage current was 102 nA and 960 nA, respectively. The low frequency noise characteristics were also measured and studied. The Hooge's coefficient estimated at VGS=0 V. When VDS is 10 V and 2 V at frequency of 100 Hz, the Hooge's coefficient is 1.25 × 10-3 and 5.69 × 10-4, respectively.

原文English
主出版物標題ECS Transactions - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9
發行者Electrochemical Society Inc.
頁面103-109
頁數7
版本7
ISBN(列印)9781566776530
DOIs
出版狀態Published - 2009
事件State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting - Honolulu, HI, United States
持續時間: 2008 十月 122008 十月 17

出版系列

名字ECS Transactions
號碼7
16
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49) -and- Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9 - 214th ECS Meeting
國家/地區United States
城市Honolulu, HI
期間08-10-1208-10-17

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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