Investigation and fabrication of bottom gate ZnO:Al TTFTs with various thicknesses of ZnO buffer layers

研究成果: Conference contribution

摘要

An Al doped ZnO (ZnO:Al) transparent thin film transistors (TTFTs) with various thickness of ZnO buffer layer sandwiched between gate insulator and channel layer were deposited by a magnetron radio frequency co-sputter system. When the thickness of the buffer layer was 80 nm, the field-effect carrier mobility of the TTFTs was as high as 122.0 cm2/V-s. Furthermore, the associated gate voltage swing was 0.24 V/decade, and the maximum state density was 2.69×1011 eV-1cm2. The on-to-off current ratio of the TTFTs with 80 nm-thick ZnO buffer layer was up to 5×107.

原文English
主出版物標題Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
頁面21-26
頁數6
版本4
DOIs
出版狀態Published - 2010 十二月 29
事件Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
持續時間: 2010 四月 252010 四月 30

出版系列

名字ECS Transactions
號碼4
28
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

OtherWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
國家/地區Canada
城市Vancouver, BC
期間10-04-2510-04-30

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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