The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.
All Science Journal Classification (ASJC) codes
- 物理與天文學 (全部)