Investigation of accumulated carrier mechanism on sulfurated GaN layers

Yow Jon Lin; Chi Sen Lee; Ching Ting Lee

doi:10.1063/1.1563821

Investigation of accumulated carrier mechanism on sulfurated GaN layers

Yow Jon Lin, Chi Sen Lee, Ching Ting Lee

光電科學與工程學系

研究成果: Article › 同行評審

8 引文斯高帕斯（Scopus）

摘要

The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×10¹⁷ cm^-3 to 8.2×10¹⁹ cm^-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

原文	English
頁（從 - 到）	5321-5324
頁數	4
期刊	Journal of Applied Physics
卷	93
發行號	9
DOIs	https://doi.org/10.1063/1.1563821
出版狀態	Published - 2003 5月 1

All Science Journal Classification (ASJC) codes

物理與天文學 (全部)

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10.1063/1.1563821

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abstract = "The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.",

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AB - The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

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Investigation of accumulated carrier mechanism on sulfurated GaN layers

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