Investigation of accumulated carrier mechanism on sulfurated GaN layers

Yow Jon Lin, Chi Sen Lee, Ching Ting Lee

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The induced electron concentration accumulated on the sulfurated layer of the n-type GaN layers was studied using a simple resistance model. The electron concentration within the sulfurated layer was found to increase from its original value of 6.9×1017 cm-3 to 8.2×1019 cm-3. The induced electrons were due to the sulfur atoms occupying nitrogen vacancies.

原文English
頁(從 - 到)5321-5324
頁數4
期刊Journal of Applied Physics
93
發行號9
DOIs
出版狀態Published - 2003 5月 1

All Science Journal Classification (ASJC) codes

  • 物理與天文學 (全部)

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