Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane

Han Yin Liu, Wei Chou Hsu, Wei Fan Chen, Chih Wei Lin, Yi Ying Li, Ching Sung Lee, Wen Ching Sun, Sung Yen Wei, Sheng Min Yu

研究成果: Article

10 引文 (Scopus)

摘要

This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al2O3) to serve as a passivation layer and a sensing membrane at the same time. Al2O3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al2O3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al2O3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al2O3.

原文English
文章編號7409941
頁(從 - 到)3514-3522
頁數9
期刊IEEE Sensors Journal
16
發行號10
DOIs
出版狀態Published - 2016 五月 15

指紋

Ion sensitive field effect transistors
pH sensors
High electron mobility transistors
Passivation
passivity
field effect transistors
membranes
Membranes
sensors
Spray pyrolysis
ions
Ultrasonics
pyrolysis
sprayers
Surface potential
ultrasonics
Hysteresis
drift rate
Aluminum
Degradation

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electrical and Electronic Engineering

引用此文

Liu, Han Yin ; Hsu, Wei Chou ; Chen, Wei Fan ; Lin, Chih Wei ; Li, Yi Ying ; Lee, Ching Sung ; Sun, Wen Ching ; Wei, Sung Yen ; Yu, Sheng Min. / Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane. 於: IEEE Sensors Journal. 2016 ; 卷 16, 編號 10. 頁 3514-3522.
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abstract = "This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al2O3) to serve as a passivation layer and a sensing membrane at the same time. Al2O3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al2O3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al2O3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al2O3.",
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Investigation of AlGaN/GaN Ion-Sensitive Heterostructure Field-Effect Transistors-Based pH Sensors with Al2O3 Surface Passivation and Sensing Membrane. / Liu, Han Yin; Hsu, Wei Chou; Chen, Wei Fan; Lin, Chih Wei; Li, Yi Ying; Lee, Ching Sung; Sun, Wen Ching; Wei, Sung Yen; Yu, Sheng Min.

於: IEEE Sensors Journal, 卷 16, 編號 10, 7409941, 15.05.2016, p. 3514-3522.

研究成果: Article

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AU - Liu, Han Yin

AU - Hsu, Wei Chou

AU - Chen, Wei Fan

AU - Lin, Chih Wei

AU - Li, Yi Ying

AU - Lee, Ching Sung

AU - Sun, Wen Ching

AU - Wei, Sung Yen

AU - Yu, Sheng Min

PY - 2016/5/15

Y1 - 2016/5/15

N2 - This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al2O3) to serve as a passivation layer and a sensing membrane at the same time. Al2O3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al2O3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al2O3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al2O3.

AB - This paper demonstrates an AlGaN/GaN ion-sensitive heterostructure field-effect transistors (ISHFETs)-based pH sensors with an aluminum oxide (Al2O3) to serve as a passivation layer and a sensing membrane at the same time. Al2O3 was deposited by the ultrasonic spray pyrolysis deposition (USPD) method. It was found that the ISHFET with Al2O3 showed a higher pH sensitivity of 55.6 mV/pH, a faster response speed of 3 s (from pH 4 to pH 7) and 7 s (from pH 7 to pH 10), a lower hysteresis voltage of 4.3 mV, and a smaller drift rate of 1.25 mV/h (at pH 7) compared with the ISHFET without passivation. In addition, the ISHFET with an Al2O3 passivation layer exhibited significant surface potential variation and low degradation rate. These results suggest that the performance of ISHFET improved using USPD-grown Al2O3.

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