Investigation of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using photoelectrochemical oxidation method

Li Hsien Huang, Shu Hao Yeh, Ching Ting Lee, Haipeng Tang, Jennifer Bardwell, James B. Webb

研究成果: Conference contribution

摘要

A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5V. The gate leakage current is 50pA and 20pA at forward gate bias of Vgs=10V and reverse gate bias of Vgs= -10V, respectively. Maximum value of gm is 50ms/mm of Vgs biased at -2.09 V.

原文English
主出版物標題2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
DOIs
出版狀態Published - 2007
事件2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM - Seoul, Korea, Republic of
持續時間: 2007 八月 262007 八月 31

出版系列

名字Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

Other

Other2007 Conference on Lasers and Electro-Optics - Pacific Rim, CLEO/PACIFIC RIM
國家/地區Korea, Republic of
城市Seoul
期間07-08-2607-08-31

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 原子與分子物理與光學
  • 凝聚態物理學
  • 電氣與電子工程

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