Investigation of AlGaN/GaN metal-oxidesemiconductor high electron mobility transistors using photoelectrochemical oxidation method

Li Hsien Huang, Shu Hao Yeh, Ching Ting Lee, Haipeng Tang, Jennifer Bardwell, James B. Webb

研究成果: Conference contribution

摘要

A photoelectrochemical (PEC) oxidation method was used to directly grow oxide films on AlGaN surface as gate insulator for AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of MOS-HEMT devices is -5V. The gate leakage current is 50pA and 20pA at forward gate bias of Vgs=10V and reverse gate bias of Vgs= -10V, respectively. Maximum value of gm is 50ms/mm of Vgs biased at -2.09 V.

原文English
主出版物標題Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
發行者Optical Society of America
ISBN(列印)1424411742, 9781424411740
出版狀態Published - 2007
事件Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of
持續時間: 2007 八月 262007 八月 26

出版系列

名字Optics InfoBase Conference Papers
ISSN(電子)2162-2701

Other

OtherConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007
國家/地區Korea, Republic of
城市Seoul
期間07-08-2607-08-26

All Science Journal Classification (ASJC) codes

  • 儀器
  • 原子與分子物理與光學

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