Investigation of AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors

Li Hsien Huang, Chien Liang Lu, Ching Ting Lee

研究成果: Conference contribution

摘要

A photoelectrochemical (PEC) oxidation method was used to grow oxide films on AlGaN surface directly as gate insulator for AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of AlGaN/GaN/AlGaN MOS-HEMT devices is -3.5 V. The gate leakage current is 1.8×10-5 A at reverse gate bias of V GS= -10 V. Maximum value of gm is 53.8 mS/mm biased at VGS= -0.87 V. The current collapse is not obvious in the MOS-HEMT devices.

原文English
主出版物標題TENCON 2007 - 2007 IEEE Region 10 Conference
DOIs
出版狀態Published - 2007
事件IEEE Region 10 Conference, TENCON 2007 - Taipei, Taiwan
持續時間: 2007 十月 302007 十一月 2

Other

OtherIEEE Region 10 Conference, TENCON 2007
國家/地區Taiwan
城市Taipei
期間07-10-3007-11-02

All Science Journal Classification (ASJC) codes

  • 電腦科學應用
  • 電氣與電子工程

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