Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors

Jung Hui Tsai, Shiou Ying Cheng, Wen Shiung Lour, Wen Chau Liu, Hao Hsiung Lin

研究成果: Article同行評審

13 引文 斯高帕斯(Scopus)

摘要

In this paper, the performances of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors including heterostructure-emitter bipolar transistors (HEBT) and superlattice-confinement bipolar transistors (SCBT) are demonstrated. Due to the elimination of the potential spike at the emitter-base junction, extremely low offset voltages of 40 and 80 mV are obtained for the studied HEBT and SCBT respectively. For the HEBT, due to the small hole diffusion length and the large neutral-emitter recombination current, a degraded current gain performance is observed. On the other hand, the SCBT exhibits a large differential current gain of 240 resulting from tunnelling injection which can reduce the spread of thermal distribution and the non-radiative recombination cross-section.

原文English
頁(從 - 到)1135-1139
頁數5
期刊Semiconductor Science and Technology
12
發行號9
DOIs
出版狀態Published - 1997 九月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

指紋 深入研究「Investigation of AlInAs/GaInAs heterostructure-emitter-confinement bipolar transistors」主題。共同形成了獨特的指紋。

引用此