Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)

Shiou Ying Cheng, Jung Hui Tsai, Wen Lung Chang, Hsi Jen Pan, Yung Hsin Shie, Wen Chau Liu

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

A new InGaP/GaAs resonant-tunneling transistor (RTT) has been fabricated successfully and demonstrated. A 5-period InGaP/GaAs superlattice is used as a confinement barrier for holes and an RT route for electrons. A transistor action with a common-emitter current gain up to 220 and an offset voltage of 85 mV are obtained. Due to the RT effect within the 5-period superlattice near the emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed at room temperature. Furthermore, the N-shaped NDR is found both in the saturation and forward-active region. The widely operating regime of NDR may provide the potential for practical applications.

原文English
頁(從 - 到)755-760
頁數6
期刊Solid-State Electronics
43
發行號4
DOIs
出版狀態Published - 1999 4月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

指紋

深入研究「Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)」主題。共同形成了獨特的指紋。

引用此