Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region

Yen Lin Tsai, Jone F. Chen, Shang Feng Shen, Hao Tang Hsu, Chia Yu Kao, Kuei Fen Chang, Hann Ping Hwang

研究成果: Article同行評審

摘要

The effect of doping concentration in the n- drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n- drift doping concentration improves device characteristics. In addition, a proper increase in the n- drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n- drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n- drift region.

原文English
文章編號125019
期刊Semiconductor Science and Technology
33
發行號12
DOIs
出版狀態Published - 2018 十一月 13

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程
  • 材料化學

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