The effect of doping concentration in the n- drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n- drift doping concentration improves device characteristics. In addition, a proper increase in the n- drift doping concentration reduces hot-carrier induced device degradation. Technology computer-aided design simulation results suggest that the impact of hot-carrier induced interface charge generation on device degradation is alleviated for a higher n- drift doping concentration. Such a result can explain the reduction in hot-carrier induced device degradation for the device with a higher doping concentration in the n- drift region.
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