摘要
The degradation of ohmic performance of oxidized Au/Ni/Mg-doped GaN was investigated. Cserveny's concept was applied in the investigation and x-ray photoelectron spectroscopy was performed. It was found that an increase of hole concentration of NiOx would lead to the increasing barrier height and the increasing specific contact resistance of oxidized Au/Ni/Mg-doped GaN.
原文 | English |
---|---|
頁(從 - 到) | 2817-2819 |
頁數 | 3 |
期刊 | Applied Physics Letters |
卷 | 82 |
發行號 | 17 |
DOIs | |
出版狀態 | Published - 2003 四月 28 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)