Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Hsin Ying Lee, Iang Jeng Lin, Hir Ming Shieh, Ching Ting Lee

研究成果: Article同行評審

摘要

The double-delta-doped In0.5(Al0.7Ga0.3)0.5P/GaAs/In0. 3Ga0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both IDS-VDS characteristics and gm-VGS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.

原文English
頁(從 - 到)1075-1078
頁數4
期刊Solid-State Electronics
46
發行號8
DOIs
出版狀態Published - 2002 八月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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