The double-delta-doped In0.5(Al0.7Ga0.3)0.5P/GaAs/In0. 3Ga0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both IDS-VDS characteristics and gm-VGS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry