Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Hsin Ying Lee; Iang Jeng Lin; Hir Ming Shieh; Ching Ting Lee

doi:10.1016/S0038-1101(02)00044-8

Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Hsin Ying Lee, Iang Jeng Lin, Hir Ming Shieh, Ching Ting Lee

光電科學與工程學系

研究成果: Article › 同行評審

摘要

The double-delta-doped In_0.5(Al_0.7Ga_0.3)_0.5P/GaAs/In_{0. 3}Ga_0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both I_DS-V_DS characteristics and g_m-V_GS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.

原文	English
頁（從 - 到）	1075-1078
頁數	4
期刊	Solid-State Electronics
卷	46
發行號	8
DOIs	https://doi.org/10.1016/S0038-1101(02)00044-8
出版狀態	Published - 2002 8月

All Science Journal Classification (ASJC) codes

電子、光磁材料
凝聚態物理學
電氣與電子工程
材料化學

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10.1016/S0038-1101(02)00044-8

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title = "Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors",

abstract = "The double-delta-doped In0.5(Al0.7Ga0.3)0.5P/GaAs/In0. 3Ga0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both IDS-VDS characteristics and gm-VGS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.",

author = "Lee, {Hsin Ying} and Lin, {Iang Jeng} and Shieh, {Hir Ming} and Lee, {Ching Ting}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China.",

year = "2002",

month = aug,

doi = "10.1016/S0038-1101(02)00044-8",

language = "English",

volume = "46",

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journal = "Solid-State Electronics",

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T1 - Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

AU - Lee, Hsin Ying

AU - Lin, Iang Jeng

AU - Shieh, Hir Ming

AU - Lee, Ching Ting

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China.

PY - 2002/8

Y1 - 2002/8

N2 - The double-delta-doped In0.5(Al0.7Ga0.3)0.5P/GaAs/In0. 3Ga0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both IDS-VDS characteristics and gm-VGS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.

AB - The double-delta-doped In0.5(Al0.7Ga0.3)0.5P/GaAs/In0. 3Ga0.7As field-effect transistors (FETs) epitaxial layers were grown on (100)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both IDS-VDS characteristics and gm-VGS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.

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JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 8

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Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

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