Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Engineering & Materials Science

• Laser beams 100%
• Field effect transistors 93%
• Wavelength 51%
• Low pressure chemical vapor deposition 47%
• Metallorganic chemical vapor deposition 45%
• Epitaxial films 44%
• Frequency response 26%
• Substrates 20%

Physics & Astronomy

• field effect transistors 68%
• laser beams 63%
• illuminating 28%
• frequency response 27%
• wavelengths 27%
• metalorganic chemical vapor deposition 27%
• low pressure 24%
• excitation 14%

Chemical Compounds

• Field Effect 86%
• Epitaxial Film 62%
• Wavelength 62%
• Chemical Vapour Deposition 39%