Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Keyphrases

• Gallium Arsenide 100%
• Field-effect Transistors 100%
• Delta Doping 100%
• Laser Beams 100%
• InGaAs 100%
• Double delta 100%
• High-frequency Response 33%
• Low Pressure 33%
• Depositional System 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Epitaxial Layers 33%
• GaAs Substrate 33%
• Semi-insulating GaAs 33%

Engineering

• Field-Effect Transistor 100%
• Gallium Arsenide 100%
• Laser Beam 100%
• Indium Gallium Arsenide 100%
• Epitaxial Film 33%
• Frequency Response 33%
• Deposition System 33%
• Vapor Deposition 33%
• Chemical Vapor Deposition 33%
• Gaas Substrate 33%

Material Science

• Gallium Arsenide 100%
• Field Effect Transistor 100%
• Indium Gallium Arsenide 100%
• Epitaxial Film 33%
• Chemical Vapor Deposition 33%