Investigation of electrical and photoluminescent properties of MBE-grown AlxGa1-xAs layers

研究成果: Article同行評審

12 引文 斯高帕斯(Scopus)

摘要

The electrical and photoluminescent (PL) properties of AlxGa{1-x}As layers grown by MBE have been investigated. Some experimental factors, e.g. vacuum conditions, substrate growth temperature and As/group-III flux ratio, have been considered. Undoped AlGaAs layers exhibit slight p-type characteristics due to C accepters and its concentration is lower than 1015cm-3. Both n- and p-type AlGaAs layers achieve semi-insulated high resistance when the substrate temperature is lower than 580° C. The experimental results are comparable to other reports. In summary, the excellent vacuum environment, higher substrate temperature (Ts>580° C) and lower As/group-III flux ratio are the necessary conditions for growing high quality AlxGa1-xAs layers.

原文English
頁(從 - 到)1765-1772
頁數8
期刊Journal of Materials Science
25
發行號3
DOIs
出版狀態Published - 1990 三月 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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