Investigation of Ga2 O3-based deep ultraviolet photodetectors using plasma-enhanced atomic layer deposition system

Shao Yu Chu, Meng Xian Shen, Tsung Han Yeh, Chia Hsun Chen, Ching Ting Lee, Hsin Ying Lee

研究成果: Letter同行評審

摘要

In this work, Ga2 O3 films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system with trimethylgallium precursor and oxygen (O2) plasma. To improve the quality of Ga2 O3 films, they were annealed in an O2 ambient furnace system for 15 min at 700, 800, and 900 C, respectively. The performance improvement was verified from the measurement results of X-ray diffraction, X-ray photoelectron spectroscopy, and photoluminescence spectroscopy. The optical bandgap energy of the Ga2 O3 films decreased with an increase of annealing temperatures. Metal-semiconductor-metal ultraviolet C photodetectors (MSM UVC-PDs) with various Ga2 O3 active layers were fabricated and studied in this work. The cut-off wavelength of the MSM UVC-PDs with the Ga2 O3 active layers annealed at 800 C was 250 nm. Compared with the performance of the MSM UVC-PDs with the as-grown Ga2 O3 active layers, the MSM UVC-PDs with the 800 C-annealed Ga2 O3 active layers under a bias voltage of 5 V exhibited better performances including photoresponsivity of 22.19 A/W, UV/visible rejection ratio of 5.98 × 104, and detectivity of 8.74 × 1012 cmHz1/2 W−1 .

原文English
文章編號6159
頁(從 - 到)1-10
頁數10
期刊Sensors (Switzerland)
20
發行號21
DOIs
出版狀態Published - 2020 十一月 1

All Science Journal Classification (ASJC) codes

  • Analytical Chemistry
  • Biochemistry
  • Atomic and Molecular Physics, and Optics
  • Instrumentation
  • Electrical and Electronic Engineering

指紋 深入研究「Investigation of Ga<sub>2</sub> O<sub>3</sub>-based deep ultraviolet photodetectors using plasma-enhanced atomic layer deposition system」主題。共同形成了獨特的指紋。

引用此