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Investigation of Ga
2
O
3
-based deep ultraviolet photodetectors using plasma-enhanced atomic layer deposition system
Shao Yu Chu
, Meng Xian Shen
, Tsung Han Yeh
, Chia Hsun Chen
,
Ching Ting Lee
,
Hsin Ying Lee
光電科學與工程學系
研究成果
:
Letter
›
同行評審
28
連結會在新分頁中開啟
引文 斯高帕斯（Scopus）
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2
O
3
-based deep ultraviolet photodetectors using plasma-enhanced atomic layer deposition system」主題。共同形成了獨特的指紋。
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Keyphrases
Ga2O3
100%
Depositional System
100%
Deep UV Photodetectors
100%
Plasma-enhanced Atomic Layer Deposition (PEALD)
100%
Active Layer
50%
Photodetector
50%
Metal-semiconductor-metal
50%
Ultraviolet-C
50%
Annealing
37%
Sapphire Substrate
12%
As-grown
12%
X Ray Diffraction
12%
Bias Voltage
12%
Performance Improvement
12%
Annealing Temperature
12%
Rejection Ratio
12%
Cutoff Wavelength
12%
X-ray Photoelectron Spectroscopy
12%
Measurement Results
12%
Photoluminescence Spectroscopy
12%
UV-visible
12%
O2 Plasma
12%
Photoresponsivity
12%
Optical Energy Gap
12%
Trimethylgallium
12%
Furnace System
12%
Engineering
Photometer
100%
Deposition System
100%
Atomic Layer Deposition
100%
Active Layer
80%
Band Gap
20%
Sapphire Substrate
20%
Bias Voltage
20%
Performance Improvement
20%
Annealing Temperature
20%
Ray Diffraction
20%
Cutoff Wavelength
20%
Ray Photoelectron Spectroscopy
20%
Oxygen (O2)
20%
Physics
Blood Plasma
100%
Photometer
100%
Atomic Layer Epitaxy
100%
Ultraviolet Spectrum
20%
Photoluminescence
20%
X Ray Spectroscopy
20%
Energy Gaps (Solid State)
20%
X Ray Diffraction
20%
Material Science
Photosensor
100%
Film
60%
Sapphire
20%
X-Ray Photoelectron Spectroscopy
20%
X-Ray Diffraction
20%
Photoluminescence
20%