Investigation of hot-carrier-induced degradation mechanisms in p-type high-voltage drain extended metal-oxide-semiconductor transistors

Jone-Fang Chen, Shiang Yu Chen, Kuo Ming Wu, C. M. Liu

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

Hot-carrier-induced degradation in p-type drain extended metal-oxide-semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (ΔNit) in the channel region, ΔNit in the drift region under poly-gate, and negative oxide-trapped charge (ΔNot) in the drift region outside poly-gate are responsible for device parameter degradation. ΔN it in the channel region causes threshold voltage and maximum transconductance degradation. ΔNot in the drift region outside poly-gate leads to the increase of linear drain current (Idlin) at the beginning of stress. ΔNit in the drift region under poly-gate results in the turnaround behavior of /llin/ shift as the stress time is longer.

原文English
文章編號04C039
期刊Japanese Journal of Applied Physics
48
發行號4 PART 2
DOIs
出版狀態Published - 2009 四月 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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