Hot-carrier-induced degradation in p-type drain extended metal-oxide-semiconductor (DEMOS) devices is investigated. The gate voltage biased at the second substrate current peak produces the most device degradation. The generation of interface state (ΔNit) in the channel region, ΔNit in the drift region under poly-gate, and negative oxide-trapped charge (ΔNot) in the drift region outside poly-gate are responsible for device parameter degradation. ΔN it in the channel region causes threshold voltage and maximum transconductance degradation. ΔNot in the drift region outside poly-gate leads to the increase of linear drain current (Idlin) at the beginning of stress. ΔNit in the drift region under poly-gate results in the turnaround behavior of /llin/ shift as the stress time is longer.
All Science Journal Classification (ASJC) codes
- 工程 (全部)
- 物理與天文學 (全部)