Investigation of Hydrogen-Sensing Properties of Pd/AlGaAs-Based Schottky Diodes

Yan Ying Tsai, Kun Wei Lin, Chun Tsen Lu, Huey Ing Chen, Hung Ming Chuang, Chun Yuan Chen, Chin Chuan Cheng, Wen Chau Liu

研究成果: Article同行評審

31 引文 斯高帕斯(Scopus)

摘要

The hydrogen response characteristics and sensing properties of catalytic Pd/Al0.3Ga0.7As metal-oxide-semiconductor (MOS) and metal-semiconductor (MS) Schottky diodes are systematically studied. The effects of hydrogen adsorption on device performances such as the current-voltage characteristics, sensitivity, barrier height variation, heat of adsorption, and transient response are investigated. The studied devices can be operated under very wide hydrogen concentration regimes with remarkable hydrogen-sensing properties. Particularly, at an extremely low hydrogen concentration of 15 ppm H2/air, both steady-state and transient responses at room temperature can be detected. In addition, under the presence of oxide layer in the studied MOS device, a larger change of barrier height and higher hydrogen response are observed. In addition, according to the van't Hoff equation, the initial values of heat adsorption for Pd/semiconductor and Pd/oxide interface are calculated as 7.29 and 49.6 KJ/mole, respectively.

原文English
頁(從 - 到)2532-2539
頁數8
期刊IEEE Transactions on Electron Devices
50
發行號12
DOIs
出版狀態Published - 2003 12月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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