TY - JOUR
T1 - Investigation of improving organic light-emitting diodes efficiency using an ultra-thin ultraviolet-ozone-treated Nb-doped ZnO film as anode buffer layer
AU - Huang, Wei Lin
AU - Chu, Sheng Yuan
AU - Kao, Po Ching
N1 - Funding Information:
All persons who have made substantial contributions to the work reported in the manuscript (e.g., technical help, writing and editing assistance, general support), but who do not meet the criteria for authorship, are named in the Acknowledgments and have given us their written permission to be named. If we have not included an Acknowledgments in our manuscript, then that indicates that we have not received substantial contributions from non-authors. This work was financially supported by the Ministry of Science and Technology (MOST 110-2218-E-006-020 -) in Taiwan.
Publisher Copyright:
© 2022 Elsevier B.V.
PY - 2022/11/15
Y1 - 2022/11/15
N2 - In this study, ultraviolet (UV)-ozone treated ultrathin Nb-doped ZnO (NZO) films are developed as an efficient anode buffer layer to improve the overall performance of organic light-emitting diodes (OLEDs). The results show that the UV-ozone treated NZO buffer layer containing 1 mol% of Nb2O5 possesses a higher oxygen content and a greater work function (5.22 eV) as compared to that of an indium tin oxide (ITO) film (~4.7 eV) signifying a reduction in hole injection barrier and thus an improvement in the injection efficiency. In addition, UV-ozone treatment can increase the surface energy of NZO films while reducing their surface roughness. Importantly, the UV-ozone treated 1 nm-thick NZO film with a Nb2O5 doping concentration of 1 mol% can help to lower the turn-on voltage from 3.2 V to 2.8 V, increase the luminance from 10,450 cd/m2 to 25370 cd/m2, and improve the current efficiency from 3.46 cd/A to 5.26 cd/A, (~52 % enhancement as compared to the standard OLED device). Moreover, OLEDs with the developed buffer layer reveal a significant improvement in the roll-off phenomenon under high current densities, indicating a key role of the optimized NZO film in enhancing the carrier balance of the devices. When applied to the p-i-n structure, the NZO film also lead to a superior device performance as compared to the conventional p-i-n structure using NPB:MoO3 as a hole injection layer, suggesting a widespread use of the developed thin film. These findings therefore show a promising use of the UV-ozone treated NZO ultrathin film as an effective anode buffer material for enhancing OLED overall performance.
AB - In this study, ultraviolet (UV)-ozone treated ultrathin Nb-doped ZnO (NZO) films are developed as an efficient anode buffer layer to improve the overall performance of organic light-emitting diodes (OLEDs). The results show that the UV-ozone treated NZO buffer layer containing 1 mol% of Nb2O5 possesses a higher oxygen content and a greater work function (5.22 eV) as compared to that of an indium tin oxide (ITO) film (~4.7 eV) signifying a reduction in hole injection barrier and thus an improvement in the injection efficiency. In addition, UV-ozone treatment can increase the surface energy of NZO films while reducing their surface roughness. Importantly, the UV-ozone treated 1 nm-thick NZO film with a Nb2O5 doping concentration of 1 mol% can help to lower the turn-on voltage from 3.2 V to 2.8 V, increase the luminance from 10,450 cd/m2 to 25370 cd/m2, and improve the current efficiency from 3.46 cd/A to 5.26 cd/A, (~52 % enhancement as compared to the standard OLED device). Moreover, OLEDs with the developed buffer layer reveal a significant improvement in the roll-off phenomenon under high current densities, indicating a key role of the optimized NZO film in enhancing the carrier balance of the devices. When applied to the p-i-n structure, the NZO film also lead to a superior device performance as compared to the conventional p-i-n structure using NPB:MoO3 as a hole injection layer, suggesting a widespread use of the developed thin film. These findings therefore show a promising use of the UV-ozone treated NZO ultrathin film as an effective anode buffer material for enhancing OLED overall performance.
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U2 - 10.1016/j.jallcom.2022.166033
DO - 10.1016/j.jallcom.2022.166033
M3 - Article
AN - SCOPUS:85133654311
VL - 921
JO - Journal of the Less-Common Metals
JF - Journal of the Less-Common Metals
SN - 0925-8388
M1 - 166033
ER -