Investigation of InGaAsP transition layers for Aluminum-free InGaAs/GaAs/InGaP strained-Quantum-well lasers

Hung Pin Shiao; Wei Lin; Jian Guang Chen; Yuan Kuang Tu; Ching Ting Lee

doi:10.1109/EDMS.1994.771301

Investigation of InGaAsP transition layers for Aluminum-free InGaAs/GaAs/InGaP strained-Quantum-well lasers

Hung Pin Shiao, Wei Lin, Jian Guang Chen, Yuan Kuang Tu, Ching Ting Lee

光電科學與工程學系

研究成果: Paper › 同行評審

摘要

Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87 % and internal waveguide loss of 6.33 cm^-1

原文	English
DOIs	https://doi.org/10.1109/EDMS.1994.771301
出版狀態	Published - 1994 1月 1
事件	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan 持續時間: 1994 7月 12 → 1994 7月 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
國家/地區	Taiwan
城市	Hsinchu
期間	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

工業與製造工程
電子、光磁材料
電氣與電子工程

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10.1109/EDMS.1994.771301

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引用此

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title = "Investigation of InGaAsP transition layers for Aluminum-free InGaAs/GaAs/InGaP strained-Quantum-well lasers",

abstract = "Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87 % and internal waveguide loss of 6.33 cm-1",

author = "Shiao, {Hung Pin} and Wei Lin and Chen, {Jian Guang} and Tu, {Yuan Kuang} and Lee, {Ching Ting}",

year = "1994",

month = jan,

day = "1",

doi = "10.1109/EDMS.1994.771301",

language = "English",

note = "1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

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TY - CONF

T1 - Investigation of InGaAsP transition layers for Aluminum-free InGaAs/GaAs/InGaP strained-Quantum-well lasers

AU - Shiao, Hung Pin

AU - Lin, Wei

AU - Chen, Jian Guang

AU - Tu, Yuan Kuang

AU - Lee, Ching Ting

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87 % and internal waveguide loss of 6.33 cm-1

AB - Aluminum-free InGaAs/GaAs/InGaP strained quantum well laser with high characteristic temperature of 170 K is reported. The as-cleaved lasers with InGaAsP transition layers show internal quantum efficiency of 87 % and internal waveguide loss of 6.33 cm-1

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U2 - 10.1109/EDMS.1994.771301

DO - 10.1109/EDMS.1994.771301

M3 - Paper

AN - SCOPUS:85063568954

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -

Investigation of InGaAsP transition layers for Aluminum-free InGaAs/GaAs/InGaP strained-Quantum-well lasers

摘要

Conference

All Science Journal Classification (ASJC) codes

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