Investigation of InN nanorod-based egfet pH sensors fabricated on quartz substrate

The extended gate field effect transistor (EGFET) consists of an ion-sensitive electrode and a metal-oxide semiconductor field-effect-transistor (MOSFET) device. It can be used to measure ion content in an electrolytic solution. In this article, we present the work of our research group, which has successfully fabricated the first Indium Nitride (InN) nanorod as a sensitive membrane of the EGFET pH sensor. The InN nanorod-based EGFET pH sensor was fabricated on a quartz substrate using molecular beam epitaxy (MBE). The EGFET pH sensor with InN nanorods demonstrated improved sensing performance. The measured current and voltage sensitivities of the pH sensor were 26 μA/pH and 22.66 mV/pH, at pH values ranging from 4 to 10. This makes them suitable for a variety of applications such as pH sensors and biosensors.