Investigation of InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure

Tzu Pin Chen, Wei-Hsin Chen, Kuei Yi Chu, Li Yang Chen, Chi Jhung Lee, Shiou Ying Cheng, Jung Hui Tsai, Wen-Chau Liu

研究成果: Conference contribution

摘要

An interesting InP/InGaAs double heterojunction bipolar transistor (DHBT) with a step-graded InAlGaAs/InP collector structure are demonstrated and studied. By use of the step-graded InAlGaAs/InP collector structure at the base-collector heterojunction, the current blocking effect is effectively eliminated. Experimentally, the studied device shows a relatively better common-emitter breakdown voltage and low output conductance though at high temperature. Also, the studied device shows a wider collector current density operation region which over 11 decades in magnitude of collector current density (10-6 to 105 A/cm2). Moreover, the studied device also shows the relatively weaker temperature dependence on the electron impact ionization α. Consequently, the studied DHBT device provides the promise for low-voltage and low-power circuit applications.

原文English
主出版物標題IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
頁面168-171
頁數4
DOIs
出版狀態Published - 2008 9月 9
事件IWJT-2008 - International Workshop on Junction Technology - Shanghai, China
持續時間: 2008 5月 152008 5月 16

出版系列

名字IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

OtherIWJT-2008 - International Workshop on Junction Technology
國家/地區China
城市Shanghai
期間08-05-1508-05-16

All Science Journal Classification (ASJC) codes

  • 硬體和架構
  • 電氣與電子工程

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