Investigation of low-frequency noise characterization of 28-nm high-k pMOSFET with embedded SiGe source/drain

Shih Chang Tsai, San Lein Wu, Jone Fang Chen, Bo Chin Wang, Po Chin Huang, Kai Shiang Tsai, Tsung Hsien Kao, Chih Wei Yang, Cheng Guo Chen, Kun Yuan Lo, Osbert Cheng, Yean Kuen Fang

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We have studied the low-frequency noise characterizations in 28-nm high-k (HK) pMOSFET with embedded SiGe source/drain (S/D) through 1 / f noise and random telegraph noise measurements simultaneously. It is found that uniaxial compressive strain really existed in HK pMOSFET with embedded SiGe S/D. The compressive strain induced the decrease in the tunneling attenuation length reflecting in the oxide trap depth from Si/SiO2 interface to the HK layer, so that the oxide traps at a distance from insulator/semiconductor interface cannot capture carrier in the channel. Consequently, lower 1 / f noise level in HK pMOSFET with embedded SiGe S/D is observed, thanks to the less carrier fluctuations from trapping/detrapping behaviors. This result represents an intrinsic benefit of HK pMOSFET using embedded SiGe S/D in low-frequency noise characteristics.

原文English
文章編號787132
期刊Journal of Nanomaterials
2014
DOIs
出版狀態Published - 2014

All Science Journal Classification (ASJC) codes

  • 材料科學(全部)

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