Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

Yi Shu Hsieh, Chien Yu Li, Chang Min Lin, Na Fu Wang, Jian V. Li, Mau-phon Houng

研究成果: Article

1 引文 (Scopus)

摘要

We report a metal-insulator-semiconductor (MIS) diode with an α-Ga2O3 thin-film insulator layer grown by liquid-phase deposition (LPD). α-Ga2O3 exhibits a high energy bandgap of 4.9–5.3 eV, which can effectively reduce the leakage current density and improve the breakdown voltage of the diode. The α-Ga2O3 thin films are synthesized from GaOOH with LPD. The α-GaOOH crystal is simply obtained by the dissociation of the Ga(OH)3 precursor solution. GaOOH can be transformed into α-Ga2O3 crystal and form a uniform thin film following post-growth annealing. When the α-Ga2O3 thin film is inserted in between Ni and Si to form a Ni/α-Ga2O3/Si MIS diode, the barrier height of the diode increases by 0.4 eV and the on/off ratio by 100-fold from those of the Ni/Si Schottky diode. The Ni/α-Ga2O3/Si MIS diode exhibits a leakage current density of 1.07 × 10−5A/cm2 under −2 V bias. The breakdown voltage of the diode reaches −166 V without the guard ring and other insulation structures. Our results demonstrate that LPD-grown α-Ga2O3 thin films can obtain uniform and dense structure under short deposition time and at an annealing temperature of 400 °C. The uniform insulating layer of α-Ga2O3 has a high potential in enhancing the electrical characteristic of diodes and other power electronic devices.

原文English
頁(從 - 到)414-419
頁數6
期刊Thin Solid Films
685
DOIs
出版狀態Published - 2019 九月 1

指紋

Semiconductor diodes
semiconductor diodes
MIS (semiconductors)
liquid phases
Diodes
Metals
Thin films
diodes
Liquids
thin films
Electric breakdown
electrical faults
Leakage currents
leakage
Current density
Annealing
current density
Crystals
annealing
Schottky diodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

引用此文

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abstract = "We report a metal-insulator-semiconductor (MIS) diode with an α-Ga2O3 thin-film insulator layer grown by liquid-phase deposition (LPD). α-Ga2O3 exhibits a high energy bandgap of 4.9–5.3 eV, which can effectively reduce the leakage current density and improve the breakdown voltage of the diode. The α-Ga2O3 thin films are synthesized from GaOOH with LPD. The α-GaOOH crystal is simply obtained by the dissociation of the Ga(OH)3 precursor solution. GaOOH can be transformed into α-Ga2O3 crystal and form a uniform thin film following post-growth annealing. When the α-Ga2O3 thin film is inserted in between Ni and Si to form a Ni/α-Ga2O3/Si MIS diode, the barrier height of the diode increases by 0.4 eV and the on/off ratio by 100-fold from those of the Ni/Si Schottky diode. The Ni/α-Ga2O3/Si MIS diode exhibits a leakage current density of 1.07 × 10−5A/cm2 under −2 V bias. The breakdown voltage of the diode reaches −166 V without the guard ring and other insulation structures. Our results demonstrate that LPD-grown α-Ga2O3 thin films can obtain uniform and dense structure under short deposition time and at an annealing temperature of 400 °C. The uniform insulating layer of α-Ga2O3 has a high potential in enhancing the electrical characteristic of diodes and other power electronic devices.",
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Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition. / Hsieh, Yi Shu; Li, Chien Yu; Lin, Chang Min; Wang, Na Fu; Li, Jian V.; Houng, Mau-phon.

於: Thin Solid Films, 卷 685, 01.09.2019, p. 414-419.

研究成果: Article

TY - JOUR

T1 - Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition

AU - Hsieh, Yi Shu

AU - Li, Chien Yu

AU - Lin, Chang Min

AU - Wang, Na Fu

AU - Li, Jian V.

AU - Houng, Mau-phon

PY - 2019/9/1

Y1 - 2019/9/1

N2 - We report a metal-insulator-semiconductor (MIS) diode with an α-Ga2O3 thin-film insulator layer grown by liquid-phase deposition (LPD). α-Ga2O3 exhibits a high energy bandgap of 4.9–5.3 eV, which can effectively reduce the leakage current density and improve the breakdown voltage of the diode. The α-Ga2O3 thin films are synthesized from GaOOH with LPD. The α-GaOOH crystal is simply obtained by the dissociation of the Ga(OH)3 precursor solution. GaOOH can be transformed into α-Ga2O3 crystal and form a uniform thin film following post-growth annealing. When the α-Ga2O3 thin film is inserted in between Ni and Si to form a Ni/α-Ga2O3/Si MIS diode, the barrier height of the diode increases by 0.4 eV and the on/off ratio by 100-fold from those of the Ni/Si Schottky diode. The Ni/α-Ga2O3/Si MIS diode exhibits a leakage current density of 1.07 × 10−5A/cm2 under −2 V bias. The breakdown voltage of the diode reaches −166 V without the guard ring and other insulation structures. Our results demonstrate that LPD-grown α-Ga2O3 thin films can obtain uniform and dense structure under short deposition time and at an annealing temperature of 400 °C. The uniform insulating layer of α-Ga2O3 has a high potential in enhancing the electrical characteristic of diodes and other power electronic devices.

AB - We report a metal-insulator-semiconductor (MIS) diode with an α-Ga2O3 thin-film insulator layer grown by liquid-phase deposition (LPD). α-Ga2O3 exhibits a high energy bandgap of 4.9–5.3 eV, which can effectively reduce the leakage current density and improve the breakdown voltage of the diode. The α-Ga2O3 thin films are synthesized from GaOOH with LPD. The α-GaOOH crystal is simply obtained by the dissociation of the Ga(OH)3 precursor solution. GaOOH can be transformed into α-Ga2O3 crystal and form a uniform thin film following post-growth annealing. When the α-Ga2O3 thin film is inserted in between Ni and Si to form a Ni/α-Ga2O3/Si MIS diode, the barrier height of the diode increases by 0.4 eV and the on/off ratio by 100-fold from those of the Ni/Si Schottky diode. The Ni/α-Ga2O3/Si MIS diode exhibits a leakage current density of 1.07 × 10−5A/cm2 under −2 V bias. The breakdown voltage of the diode reaches −166 V without the guard ring and other insulation structures. Our results demonstrate that LPD-grown α-Ga2O3 thin films can obtain uniform and dense structure under short deposition time and at an annealing temperature of 400 °C. The uniform insulating layer of α-Ga2O3 has a high potential in enhancing the electrical characteristic of diodes and other power electronic devices.

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U2 - 10.1016/j.tsf.2019.06.044

DO - 10.1016/j.tsf.2019.06.044

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VL - 685

SP - 414

EP - 419

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -