Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

研究成果: Article

摘要

In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.

原文English
文章編號106445
期刊Materials Research Express
6
發行號10
DOIs
出版狀態Published - 2019 九月 13

指紋

Indium
Gallium
Oxygen vacancies
Thin film transistors
Oxide films
Ionization
Desorption
Nitrogen
Doping (additives)
Oxygen
Recovery
Binding energy
X ray photoelectron spectroscopy
Lighting
Wavelength
gallium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

引用此文

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abstract = "In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.",
author = "Cheng, {Yen Chi} and Chang, {Sheng Po} and Chang, {Shoou Jinn}",
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T1 - Investigation of nitrogen doping effects on light-induced oxygen vacancy ionization and oxygen desorption in c-IGO TFTs

AU - Cheng, Yen Chi

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

PY - 2019/9/13

Y1 - 2019/9/13

N2 - In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.

AB - In this study, crystalized indium-gallium oxide (c-IGO) thin-film transistors (TFTs) were fabricated. By applying illumination with three wavelengths and conducting recovery tests, we thoroughly investigated the mechanism for light-induced instability. Results showed that the ionization of oxygen vacancy (VO) had the greatest impact. Through nitrogen doping during channel deposition, the VO-ionization was considerably suppressed. The XPS results also revealed that the incorporated nitrogen filled oxygen vacancies and enhanced the binding energy. This approach was evident to decrease the proability of VO-ionization and improve the recovery performance simultaneously. The c-IGO TFT with N-doping channel layer was proven to have better ambient stability under light stress.

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