Investigation of optical parameters of boron doped aluminium nitride films grown on diamond using spectroscopic ellipsometry

Deng Xie, Zhi Ren Qiu, Devki N. Talwar, Yi Liu, Jen Hao Song, Jow Lay Huang, Ting Mei, Chee Wee Liu, Zhe Chuan Feng

研究成果: Article

1 引文 斯高帕斯(Scopus)

摘要

Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.

原文English
頁(從 - 到)97-110
頁數14
期刊International Journal of Nanotechnology
12
發行號1-2
DOIs
出版狀態Published - 2015

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics
  • Bioengineering

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