Boron doped aluminium nitride (B)AlN films are prepared on diamond substrate by using a co-sputtering system. The dielectric function of diamond substrate and (B)AlN films with B contents of 0%, 3%, 5% are extracted by using the spectroscopic ellipsometry. Whereas the (B)AlN films having B contents lower than 5% are considered important for improving crystalline and electronic properties of the buffer layers - the films with B contents ≤3%, however, do not cause appreciable changes in its direct bandgaps.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Materials Chemistry
- Condensed Matter Physics