Investigation of Pd|HfO2|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches

Y. C. Lin, J. S. Niu, W. C. Liu, J. H. Tsai

研究成果: Article同行評審

摘要

Abstract: A new Pd|HfO2|AlGaN|GaN metal-oxide-semiconductor (MOS) enhancement-mode high electron mobility transistor (HEMT) is fabricated with low-temperature sensitization, activation, electroless-plating, and two-step gate-recess approaches. Experimentally, a high positive threshold voltage Vth of 1.96 V, a very low gate leakage IG of 6.3 × 10–8 mA/mm, a high maximum extrinsic transconductance gm, max of 75.3 mS/mm, a high maximum drain saturation current ID, max of 266.9 mA/mm, and a high ON/OFF current ratio of 7.6 × 107 are obtained at 300 K. Moreover, the related temperature-dependent characteristics, over temperature ranges from 300 to 500 K, are comprehensively studied. The very low temperature coefficients on gate current, drain saturation current, transconductance, and threshold voltage confirm the thermal-stable capability of the studied device. Therefore, based on these advantages, the studied Pd|HfO2|AlGaN|GaN MOS structure is suitable for the development of high-performance HEMTs.

原文English
頁(從 - 到)803-810
頁數8
期刊Semiconductors
54
發行號7
DOIs
出版狀態Published - 2020 七月 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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