Investigation of photoelectrochemical-oxidized p-GaSb films

Hsin Ying Lee, Hung Lin Huang, Ching Ting Lee, Oleg Petrovich Pchelyakov, Nikolay Andreevich Pakhanov

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb 2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O 3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.

原文English
文章編號251604
期刊Applied Physics Letters
101
發行號25
DOIs
出版狀態Published - 2012 十二月 17

All Science Journal Classification (ASJC) codes

  • 物理與天文學(雜項)

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