GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb 2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O 3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.
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