Investigation of photoelectrochemical-oxidized p-GaSb films

Hsin Ying Lee; Hung Lin Huang; Ching Ting Lee; Oleg Petrovich Pchelyakov; Nikolay Andreevich Pakhanov

doi:10.1063/1.4772497

Investigation of photoelectrochemical-oxidized p-GaSb films

Hsin Ying Lee, Hung Lin Huang, Ching Ting Lee, Oleg Petrovich Pchelyakov, Nikolay Andreevich Pakhanov

光電科學與工程學系

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga₂O₃, Sb₂O₃, and Sb ₂O₅. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb₂O₅ than Sb₂O ₃. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb₂O₅ content and decrease of the elemental Sb content in the films.

原文	English
文章編號	251604
期刊	Applied Physics Letters
卷	101
發行號	25
DOIs	https://doi.org/10.1063/1.4772497
出版狀態	Published - 2012 12月 17

All Science Journal Classification (ASJC) codes

物理與天文學（雜項）

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10.1063/1.4772497

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@article{dc3aee59415a4ea2840964aaeeb0a079,

title = "Investigation of photoelectrochemical-oxidized p-GaSb films",

abstract = "GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb 2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O 3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.",

author = "Lee, {Hsin Ying} and Huang, {Hung Lin} and Lee, {Ching Ting} and {Petrovich Pchelyakov}, Oleg and {Andreevich Pakhanov}, Nikolay",

note = "Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China under Contract No. NSC 99-2923-E-006-003-MY3, Advanced Optoelectronic Technology Center and Research Center Energy Technology and Strategy of the National Cheng Kung University. The p-GaSb wafers were provided by the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences.",

year = "2012",

month = dec,

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doi = "10.1063/1.4772497",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

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T1 - Investigation of photoelectrochemical-oxidized p-GaSb films

AU - Lee, Hsin Ying

AU - Huang, Hung Lin

AU - Lee, Ching Ting

AU - Petrovich Pchelyakov, Oleg

AU - Andreevich Pakhanov, Nikolay

N1 - Funding Information: This work was supported by the National Science Council of Taiwan, Republic of China under Contract No. NSC 99-2923-E-006-003-MY3, Advanced Optoelectronic Technology Center and Research Center Energy Technology and Strategy of the National Cheng Kung University. The p-GaSb wafers were provided by the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences.

PY - 2012/12/17

Y1 - 2012/12/17

N2 - GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb 2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O 3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.

AB - GaSb oxide films were directly formed on the p-GaSb films using the bias-assisted photoelectrochemical (PEC) oxidation method. X-ray photoelectron spectroscopy analysis indicated that the resulting GaSb oxide films consisted of Ga2O3, Sb2O3, and Sb 2O5. Different from the non-PEC oxides, the PEC derived oxide contained much more Sb2O5 than Sb2O 3. Besides, the interface state density between the PEC oxide and p-GaSb was lower than that of the ordinary oxide/p-GaSb interface. The high quality of the PEC-oxidized GaSb films was attributed to the increase of the stable Sb2O5 content and decrease of the elemental Sb content in the films.

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Investigation of photoelectrochemical-oxidized p-GaSb films

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