Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

Han Yin Liu, Wen Chia Ou, Wei Chou Hsu

研究成果: Article

1 引文 (Scopus)

摘要

This paper investigates the Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400 °C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance-voltage (C-V) measurement was also used to characterize the amount of traps at the Al2O3/AlGaN interface. It was found that the amount of the traps reduced after POA process. In addition, the performance of the MOSHEMT like gate leakage current, output current, subthreshold swing, off-state breakdown voltage, frequency response, and power characteristics were improved after POA process.

原文English
文章編號7523248
頁(從 - 到)358-364
頁數7
期刊IEEE Journal of the Electron Devices Society
4
發行號5
DOIs
出版狀態Published - 2016 九月

指紋

Semiconductors
Oxides
Metals
Electrons
Annealing
Photoelectron Spectroscopy
Oxidation
Atomic Force Microscopy
High electron mobility transistors
Transmission Electron Microscopy
Capacitance measurement
Voltage measurement
Electric breakdown
Leakage currents
Frequency response
Hysteresis
Atomic force microscopy
X ray photoelectron spectroscopy
Transmission electron microscopy
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

引用此文

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title = "Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs",
abstract = "This paper investigates the Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400 °C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance-voltage (C-V) measurement was also used to characterize the amount of traps at the Al2O3/AlGaN interface. It was found that the amount of the traps reduced after POA process. In addition, the performance of the MOSHEMT like gate leakage current, output current, subthreshold swing, off-state breakdown voltage, frequency response, and power characteristics were improved after POA process.",
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Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs. / Liu, Han Yin; Ou, Wen Chia; Hsu, Wei Chou.

於: IEEE Journal of the Electron Devices Society, 卷 4, 編號 5, 7523248, 09.2016, p. 358-364.

研究成果: Article

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T1 - Investigation of post oxidation annealing effect on H2O2-Grown-Al2O3/AlGaN/GaN MOSHEMTs

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AB - This paper investigates the Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) performance with post oxidation annealing (POA) process. First, the optimum annealing condition was found to be 400 °C for 20 min. The transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy were used for material analysis. The hysteresis capacitance-voltage (C-V) measurement was also used to characterize the amount of traps at the Al2O3/AlGaN interface. It was found that the amount of the traps reduced after POA process. In addition, the performance of the MOSHEMT like gate leakage current, output current, subthreshold swing, off-state breakdown voltage, frequency response, and power characteristics were improved after POA process.

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