Investigation of pulsed ultraviolet laser annealing of Sb/SnO₂ thin films on the structural, optical and electrical properties

Sb/SnO₂ bi-layer films were prepared using ion beam sputtering deposition (IBSD) and radio frequency (RF) magnetron sputtering deposition. The optimal parameters of SnO₂ thin films were found to be dependent on the processing conditions of vacuum pressure and flow ratio of O₂/(O₂+Ar). The as deposited bi-layer films were treated by ex situ pulsed ultraviolet laser beam at 355nm for the assistance of Sb-ion with SnO₂ interface. This paper takes a closer look at the characteristics of the laser irradiation effect of Sb/SnO₂ bi-layer films on the optical and electrical behavior and the interface microstructure of Sb/SnO₂ by high resolution transmission electron microscopy (HR-TEM). After UV pulse laser irradiation of bi-layer films, crystalline Sb between amorphous Sb and SnO₂ nanocrystalline thin films was observed.