To avoid the undesirable thermal treatment in high temperature, we proposed a new technique to deposit Si-Ge films on Si substrate in room temperature and without thermal post-annealing process. Since CO2 laser can be used as an energy source to induce gas-phase pyrolysis of SiH4 in a reactor, we used CO2 laser to assist the deposition of Si-Ge films on Si substrate in a conventional plasma-enhanced chemical deposition system (PECVD). An external CO2 laser beam with a wavelength of 10.6 μm was guided into the chamber of the conventional PECVD system. To deposit Si-Ge films on Si substrate without heating, argon-diluted SiH4 (4%) and GeH4 were used as reactant gas sources. In this study, the surface morphology of a-SiGe:H thin films grown with various laser power densities was examined using atomic force microscopy (AFM). The bonding configuration was analyzed by Raman spectroscopy and Fourier transmission infrared (FTIR) spectroscopy. copyright The Electrochemical Society.
|頁（從 - 到）||197-206|
|出版狀態||Published - 2006 十二月 1|
|事件||SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico|
持續時間: 2006 十月 29 → 2006 十一月 3
All Science Journal Classification (ASJC) codes