Investigation of silicon-germanium films deposited by plasma-enhanced chemical vapor deposition using laser assistance

Ching Ting Lee, Jun Hung Cheng, Yao Ming Chen, Tai Cheng Tsai

研究成果: Conference contribution

摘要

To avoid the undesirable thermal treatment in high temperature, we proposed a new technique to deposit Si-Ge films on Si substrate in room temperature and without thermal post-annealing process. Since CO2 laser can be used as an energy source to induce gas-phase pyrolysis of SiH4 in a reactor, we used CO2 laser to assist the deposition of Si-Ge films on Si substrate in a conventional plasma-enhanced chemical deposition system (PECVD). An external CO2 laser beam with a wavelength of 10.6 μm was guided into the chamber of the conventional PECVD system. To deposit Si-Ge films on Si substrate without heating, argon-diluted SiH4 (4%) and GeH4 were used as reactant gas sources. In this study, the surface morphology of a-SiGe:H thin films grown with various laser power densities was examined using atomic force microscopy (AFM). The bonding configuration was analyzed by Raman spectroscopy and Fourier transmission infrared (FTIR) spectroscopy. copyright The Electrochemical Society.

原文English
主出版物標題SiGe and Ge
主出版物子標題Materials, Processing, and Devices
發行者Electrochemical Society Inc.
頁面197-206
頁數10
版本7
ISBN(電子)1566775078
DOIs
出版狀態Published - 2006
事件SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
持續時間: 2006 10月 292006 11月 3

出版系列

名字ECS Transactions
號碼7
3
ISSN(列印)1938-5862
ISSN(電子)1938-6737

Other

OtherSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
國家/地區Mexico
城市Cancun
期間06-10-2906-11-03

All Science Journal Classification (ASJC) codes

  • 工程 (全部)

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