Investigation of silicon-germanium metal-oxide-semiconductor field-effect transistors grown by laser-assisted plasma-enhanced chemical vapor deposition

研究成果: Conference contribution

摘要

SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasmaenhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.

原文English
主出版物標題2008 5th International Conference on Group IV Photonics, GFP
頁面161-163
頁數3
DOIs
出版狀態Published - 2008 十一月 21
事件2008 5th International Conference on Group IV Photonics, GFP - Sorrento, Italy
持續時間: 2008 九月 172008 九月 19

出版系列

名字2008 5th International Conference on Group IV Photonics, GFP

Other

Other2008 5th International Conference on Group IV Photonics, GFP
國家/地區Italy
城市Sorrento
期間08-09-1708-09-19

All Science Journal Classification (ASJC) codes

  • 電氣與電子工程
  • 電子、光磁材料

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