Investigation of SiO2on AlGaAs prepared by liquid phase deposition

Kuan Wei Lee; Jung Sheng Huang; Yu Lin Lu; Fang Ming Lee; Hsien Cheng Lin; Jian Jun Huang; Yeong Her Wang

doi:10.1109/ICIPRM.2010.5516132

Investigation of SiO₂on AlGaAs prepared by liquid phase deposition

Kuan Wei Lee, Jung Sheng Huang, Yu Lin Lu, Fang Ming Lee, Hsien Cheng Lin, Jian Jun Huang, Yeong Her Wang

研究成果: Conference contribution

摘要

The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO₂) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO₂ very economically. Both the aqueous solution of hydro-fluosilicic acid (H₂SiF₆) and boric acid (H₃BO₃) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ∼ 4.24 × 10^-7 A/cm² at 1 MV/cm, and the interface trap density is ∼ 1.7 × 10¹¹ cm ^-2eV^-1 for the LPD-SiO₂ thickness of 29 nm.

原文	English
主出版物標題	2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
頁面	191-194
頁數	4
DOIs	https://doi.org/10.1109/ICIPRM.2010.5516132
出版狀態	Published - 2010 八月 30
事件	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan 持續時間: 2010 五月 31 → 2010 六月 4

出版系列

名字	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN（列印）	1092-8669

Other

Other	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
國家	Japan
城市	Kagawa
期間	10-05-31 → 10-06-04

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

存取文件

10.1109/ICIPRM.2010.5516132

指紋深入研究「Investigation of SiO<sub>2</sub>on AlGaAs prepared by liquid phase deposition」主題。共同形成了獨特的指紋。

引用此

Lee, K. W., Huang, J. S., Lu, Y. L., Lee, F. M., Lin, H. C., Huang, J. J., & Wang, Y. H. (2010). Investigation of SiO₂on AlGaAs prepared by liquid phase deposition. 於 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings (頁 191-194). [5516132] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516132

Lee, Kuan Wei ; Huang, Jung Sheng ; Lu, Yu Lin ; Lee, Fang Ming ; Lin, Hsien Cheng ; Huang, Jian Jun ; Wang, Yeong Her. / Investigation of SiO₂on AlGaAs prepared by liquid phase deposition. 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. 頁 191-194 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

@inproceedings{882dba1bc8d346d89e76f61fba877d40,

title = "Investigation of SiO2on AlGaAs prepared by liquid phase deposition",

abstract = "The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ∼ 4.24 × 10-7 A/cm2 at 1 MV/cm, and the interface trap density is ∼ 1.7 × 1011 cm -2eV-1 for the LPD-SiO2 thickness of 29 nm.",

author = "Lee, {Kuan Wei} and Huang, {Jung Sheng} and Lu, {Yu Lin} and Lee, {Fang Ming} and Lin, {Hsien Cheng} and Huang, {Jian Jun} and Wang, {Yeong Her}",

year = "2010",

month = aug,

day = "30",

doi = "10.1109/ICIPRM.2010.5516132",

language = "English",

isbn = "9781424459209",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "191--194",

booktitle = "2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings",

note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",

}

Lee, KW, Huang, JS, Lu, YL, Lee, FM, Lin, HC, Huang, JJ & Wang, YH 2010, Investigation of SiO₂on AlGaAs prepared by liquid phase deposition. 於 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings., 5516132, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 頁 191-194, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 10-05-31. https://doi.org/10.1109/ICIPRM.2010.5516132

Investigation of SiO₂on AlGaAs prepared by liquid phase deposition. / Lee, Kuan Wei; Huang, Jung Sheng; Lu, Yu Lin; Lee, Fang Ming; Lin, Hsien Cheng; Huang, Jian Jun; Wang, Yeong Her.

2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 191-194 5516132 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

研究成果: Conference contribution

TY - GEN

T1 - Investigation of SiO2on AlGaAs prepared by liquid phase deposition

AU - Lee, Kuan Wei

AU - Huang, Jung Sheng

AU - Lu, Yu Lin

AU - Lee, Fang Ming

AU - Lin, Hsien Cheng

AU - Huang, Jian Jun

AU - Wang, Yeong Her

PY - 2010/8/30

Y1 - 2010/8/30

N2 - The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ∼ 4.24 × 10-7 A/cm2 at 1 MV/cm, and the interface trap density is ∼ 1.7 × 1011 cm -2eV-1 for the LPD-SiO2 thickness of 29 nm.

AB - The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ∼ 4.24 × 10-7 A/cm2 at 1 MV/cm, and the interface trap density is ∼ 1.7 × 1011 cm -2eV-1 for the LPD-SiO2 thickness of 29 nm.

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T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 191

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BT - 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings

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Lee KW, Huang JS, Lu YL, Lee FM, Lin HC, Huang JJ 等. Investigation of SiO₂on AlGaAs prepared by liquid phase deposition. 於 2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings. 2010. p. 191-194. 5516132. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2010.5516132