Investigation of SiO2on AlGaAs prepared by liquid phase deposition

Kuan Wei Lee, Jung Sheng Huang, Yu Lin Lu, Fang Ming Lee, Hsien Cheng Lin, Jian Jun Huang, Yeong Her Wang

研究成果: Conference contribution

摘要

The liquid phase deposition (LPD) was used to deposit silicon oxide (SiO2) layer on AlGaAs near room temperature. The LPD method is not only simple but also can obtain the SiO2 very economically. Both the aqueous solution of hydro-fluosilicic acid (H2SiF6) and boric acid (H3BO3) were used for the LPD solution. After rapid temperature annealing (RTA) at 300°C for 1 min, the leakage current density is ∼ 4.24 × 10-7 A/cm2 at 1 MV/cm, and the interface trap density is ∼ 1.7 × 1011 cm -2eV-1 for the LPD-SiO2 thickness of 29 nm.

原文English
主出版物標題2010 International Conference on Indium Phosphide and Related Materials, 22nd IPRM - Conference Proceedings
頁面191-194
頁數4
DOIs
出版狀態Published - 2010 八月 30
事件22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan
持續時間: 2010 五月 312010 六月 4

出版系列

名字Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(列印)1092-8669

Other

Other22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
國家Japan
城市Kagawa
期間10-05-3110-06-04

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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