Investigation of sputtered TaCx and WCx films as diffusion barriers for Cu metallization

Yi Tsai Hao Yi Tsai, Shui-Jinn Wang, S. C. Sun

研究成果: Conference contribution

摘要

Physical and electrical properties as well as thermal stability of sputter-deposited TaCx and WCx films were investigated. The 60nm-thick TaCx and WCx film shows a resistivity of around 385 μΩ-cm and 227 μΩ2-cm, respectively. The allowable thermal stability of TaCx layer was found around 700°C which is about 50∼100°C higher than that of WCx layer. It was found that the failure of the TaCx and WCx barrier layers is mainly attributed to the diffusion of Cu through the grain boundaries or localized defects of the barrier layers into Si substrate.

原文English
主出版物標題International Symposium on VLSI Technology, Systems, and Applications, Proceedings
頁面267-270
頁數4
出版狀態Published - 2001
事件2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings - Hsinchu, Taiwan
持續時間: 2001 4月 182001 4月 20

Other

Other2001 International Symposium on VLSI Technology, Systems, and Applications, Proceedings
國家/地區Taiwan
城市Hsinchu
期間01-04-1801-04-20

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 凝聚態物理學
  • 電氣與電子工程

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