Investigation of static corrosion between W Metals and TiNx Barriers in a W chemical-mechanical-polishing slurry

Chi Cheng Hung, Ying Lang Wang, Wen Hsi Lee, Shih Chieh Chang

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

In order to control the polishing qualities of tungsten (W) and titanium nitride (TiNx) films in W chemical-mechanical-polishing (WCMP) processes, the electrochemical behavior between the W and the TiNx films deposited at various N2 flow rates was examined in this study. Metrologies, including X-ray diffractrometry, Auger electron spectrometry, and scanning electron microscopy, were used to verify the physical properties of the TiNx films, while electrochemical analyses, including electrochemical impedance spectroscopy, potential dynamic curves, and potential difference measurements, were used to characterize the mechanism of galvanic corrosion between the W and the TiNx films deposited at various N2 flow rates. The results show that the N content of the TiNx films influences not only the physical properties of the TiNx films but also the chemical activity in the WCMP slurries. The equivalent circuit, including the charge-transfer resistance and the titanium-oxide resistance associated with tantalum-oxide capacitance, was built to characterize the mechanism of the galvanic corrosion between the W and the TiNx metals.

原文English
頁(從 - 到)H469-H473
期刊Journal of the Electrochemical Society
155
發行號7
DOIs
出版狀態Published - 2008 六月 2

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 可再生能源、永續發展與環境
  • 表面、塗料和薄膜
  • 電化學
  • 材料化學

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