Two kinds of heterostructure field-effect transistor (FET) with an InGaAs step-doped-channel (SDC) profile have been fabricated and demonstrated. For the 1×100 μm2 gated dimension, the maximum drain saturation currents were 735 and 675 mA/mm, the maximum transconductances 200 and 232 mS/mm, the gate breakdown voltages 15 V and 12 V, the wide gate voltage swing 3.3 and 2.6 V with transconductance gm higher than 150 mS/mm. A simple model is employed to analyze the performance of threshold voltage VT and the threshold voltage -3.7 and -1.8 V are obtained, respectively. These good performances show the studied SDCFET have good potential for high-speed, high-power circuit applications.
|出版狀態||Published - 1996 12月 1|
|事件||Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD - Canberra, Aust|
持續時間: 1996 12月 8 → 1996 12月 11
|Other||Proceedings of the 1996 Conference on Optoelectronic & Microelectronic Materials and Devices, COMMAD|
|期間||96-12-08 → 96-12-11|
All Science Journal Classification (ASJC) codes
- 工程 (全部)