Investigation of the carrier dynamic in GaN-based cascade green light-emitting diodes using the very fast electricaloptical pumpprobe technique

Jin Wei Shi, H. W. Huang, F. M. Kuo, W. C. Lai, Ming Lun Lee, Jinn Kong Sheu

研究成果: Article同行評審

15 引文 斯高帕斯(Scopus)

摘要

For the first time, the internal carrier dynamic inside GaN-based green light-emitting diodes (LEDs) during operation has been directly observed using the demonstrated electricaloptical pumpprobe technique. Short electrical pulses (∼100 ps) were pumped into high-speed cascade green LEDs, and the output optical pulses were probed using high-speed photoreceiver circuits. Using such a method, the recombination time constant of the carriers can be directly measured without any assumption about the recombination process. A high-speed cascade LED structure was adopted in the experiments to eliminate the influence of the RCdelay time on the measured responses. Our measurement results indicate that both single- and three-LED cascade structures have the same internal response time due to current continuity. Furthermore, based on responses measured under different temperatures (from 25°Cto 200°C), the origin of the efficiency droop in GaN-based green LEDs under a high bias current density may be attributed to the strong nonradiative Auger effect rather than device heating or carrier overflow. The demonstrated measurement scheme and high-speed cascade device structure offer a novel and simple way to straightforwardly investigate the internal carrier dynamic inside the active layers of the LED during forward-bias operation.

原文English
文章編號5665764
頁(從 - 到)495-500
頁數6
期刊IEEE Transactions on Electron Devices
58
發行號2
DOIs
出版狀態Published - 2011 2月

All Science Journal Classification (ASJC) codes

  • 電子、光磁材料
  • 電氣與電子工程

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