Investigation of the dynamic interaction between dopants and oxygen vacancies in amorphous Nb₂O₅: Simulation and experimental study

Keyphrases

• Dopant 100%
• Dynamic Interaction 100%
• Oxygen Vacancy 100%
• Amorphous Nb2O5 100%
• Multivalent 60%
• Band Gap 40%
• Nb2O5 40%
• Electronic Properties 20%
• Amorphous Structure 20%
• Oxidation State 20%
• Ion Diffusion 20%
• Oxide Interfaces 20%
• Resistive Random Access Memory (ReRAM) 20%
• Low Power Density 20%
• Mn Ions 20%
• Disk Drive 20%
• Mn Dopant 20%
• Oxygen Flow 20%
• Functional Materials 20%
• Spin Density 20%
• Ion Vacancy 20%
• High-speed Low-power 20%
• Amorphous Thin Films 20%
• Density Gap 20%
• Vacancy Formation 20%
• Oxygen Interaction 20%
• High-density Data Storage 20%
• Mn Vacancy 20%

Material Science

• Doping (Additives) 100%
• Oxygen Vacancy 100%
• Density 40%
• Thin Films 20%
• Electronic Property 20%
• Amorphous Material 20%
• Oxide Interface 20%
• Resistive Random-Access Memory 20%
• Functional Material 20%